| 학회 |
한국고분자학회 |
| 학술대회 |
2006년 봄 (04/06 ~ 04/07, 일산킨텍스) |
| 권호 |
31권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Preparation and Application of Patternable Bottom Antireflective Coating Material |
| 초록 |
Bottom antireflective coating material (BARC) can effectively eliminate the back reflection of light from silicon wafer in the light exposure process of semiconductor manufacture. Conventional BARC is removed at dry etching process but it has many problems like overetching. We recently developed photo sensitive and alkali soluble BARC, which comprised polymer, crosslinker, and photo acid generator. Polymer containing the UV absorption, acid labile protective group, crosslinking and alkali soluble unit was synthesized by free radical polymerization. New degradable crosslinker by photo acid generator was designed and successfully synthesized by a three-step reaction, then thermal crosslinking reaction with polymer and light decomposition reaction was verified. We formulated the bottom antireflective coating compositions with polymer, crosslinker and photo acid generator and manufactured patterns of BARC by photo lithographic process. |
| 저자 |
허근1, 권기옥1, 차상호1, 윤상웅2, 이무영3, 이종찬1
|
| 소속 |
1서울대, 2(주)삼성전자, 3(주)제일모직 |
| 키워드 |
Bottom antireflective coating; Photolithography; Crosslinker
|
| E-Mail |
|
