| 초록 |
Nowadays, minimum feature size in semiconductor devices becomes smaller. Double Imaging (DI) is one of the promising lithographic techniques to reduce feature size. The DI involves a sequence of two separate coatings and exposures of independent patterns into the same layer by using curable positive photoresist. For curable positive behavior, Photoresist should have two different functional groups. One is a solubility changing group and the other is a crosslinkable group. However, patterned photoresist could not be crosslinked because the crosslinkable group was damaged from high temperature in post-exposure bake. In this study, another type of functional group was introduced as a solubility changing group. This functional group does not require any post-exposure bake and the crosslinkable group will not react during the patterning process. |
