| 초록 |
High quality CuInSe2 (CIS) were grown on GaAs substrate by using the hot wall epitaxy method. The CIS layers were epitaxially grown along the ＜112＞ direction and the initial mole fraction was kept up during the layer growth. Based on the absorption measurement, the band-gap variation of CIS was well interpreted by the Varshni's equation. But, the energy difference, 180 meV, of the band gap between liquid helium and room temperatures was a very large value unlike that of the reported CIS. The behaviorof point defects in the CIS layer investigated by using photoluminescence (PL) at 10 K. Point defects originating from VCu, VSe, Cuint, and Seint were classified as donor or acceptor types. These PL results also led us to confirm that the p-type CIS layer had obviously converted into n-type after the Cu atmosphere treatment. Finally, we found that the In in the CIS layer did not form the native defects, because In existed in the form of stable bonds in the CIS layer. |
