| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Effects of Dielectric Surface Properties on Crystal Structures and Electrical Properties of Organic Semiconductors |
| 초록 |
There have been many efforts to achieve high-performance organic field-effect transistors (OFETs). One of the key controlling factors is to introduce physicochemically stable and organic-compatible dielectric surfaces, where organic semiconductors tend to grow into highly conjugated active layers. Here, polystyrene (PS)-grafted SiO2 hybrid layers were used as gate dielectrics for TES-ADT based OFETs. Dielectric roughness was controlled by grafting end-functionalized polystyrenes (PSs) to UVO3-treated SiO2 dielectrics. The polymer grafting densities could induce discernible surface roughnesses ranging from 0.2 nm to 1.5 nm. Changes in TES-ADT film microstructure were correlated to changes in the hole mobility of OFETs fabricated on these dielectrics. The primary impact of increased roughness was a decrease in the lateral size of crystal domains. These results confirmed that dielectric roughness is an important technical specification in flexible circuit design and fabrication. |
| 저자 |
이슬이, 장미, 양회창
|
| 소속 |
인하대 |
| 키워드 |
dielectric; TESADT; interfacial engineering
|
| E-Mail |
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