| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 봄 (04/12 ~ 04/13, 대전컨벤션센터) |
| 권호 |
37권 1호 |
| 발표분야 |
고분자가공/복합재료 |
| 제목 |
Carbon nanotube FET based IR detector |
| 초록 |
SWNT has high mobility in organic electronic device. SWNT network geometry has been actively studied for conductive device component like electrodes and active layers because such geometry can avoid inconsistency originated from distinct chirality of individual nanotube when fabricating device consisting of a single nanotube. The existence of metallic nanotube in random network brings about a low on/off ratio in FET. And SWNT have absorbing property range 1000nm wavelength. That means SWNT FET is reacted IR range light. I measure the absorbance SWNT dispersion solution 1063nm wavelength absorbing result. But SWNT-FET device is very weak environment contamination (ex: hydrogen, dust, etc). Because device need to passivation protect from environment contamination. I make PMMA polymer passivation film on device Hysteresis loop of the PMMA passivation device is width very small |
| 저자 |
황인, 박철민, 조성환
|
| 소속 |
연세대 |
| 키워드 |
carbon nanotube; polymer; IR detector
|
| E-Mail |
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