| 초록 |
We investigated the recombination profile of phosphorescent organic light emitting diodes (PhOLED) by using time-resolved electroluminescence technique. Ir(ppy)3 doped CBP was used as the emitting layer with two different hole blocking materials of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and aluminum(III)bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq). Applying voltage pulse we have been able to characterize the formation of recombination zone. From recombination zone characteristics we will introduce the idea of the device structure which is able to maintain high efficiency even in the high current density regime. |
