| 학회 | 한국재료학회 |
| 학술대회 | 2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 | 11권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | 다이렉트 플라즈마와 리모트 플라즈마 원자층 증착법으로 증착한 하프늄 산화막의 물리적, 전기적 특성에 관한 연구 |
| 초록 | In this study, we studied and compared on the characteristics of HfO2 thin high-k films deposited by Direct Plasma and Remote Plasma Atomic Layer Deposition (DPALD & RPALD) processes. The DPALD method is different from the RPALD especially in thermal stability, interfacial layer thickness, and electrical properties, etc. When the HfO2 thin film was deposited on a substrate by DPALD method, the HfO2 film was crystallized at around 40 cycles with about 3 nm thickness of the HfO2 layer on as-deposited state. However, in case of the deposition by RPALD process, the HfO2 layer was not crystallized even over 40 cycle deposition process. And the film deposited by DPALD had thicker interfacial layer than the DPALD method. These differences of the two deposition methods also make different characteristics on several electrical properties. We researched the physical and electrical characteristics of the high-k HfO2 films using several analytical methods. We used XPS and AES to surface analysis and got the cross-section images by TEM. MEIS was used in order to study on the interfacial layer properties. Also C-V and I-V experiments were performed for electrical characteristics analysis of those HfO2 thin films. |
| 저자 | 김인회, 국승우, 김석훈, 전형탁 |
| 소속 | 한양대 |
| 키워드 | ALD; 원자층 증착법; HfO2 |
