| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | Diffusion movement of Ge in Si for condensation process optimization |
| 초록 | A diffusion movement of Ge into Si is needed to make SiGe-on-insulator (SGOI) structure cost effective and dislocation free via condensation method. In a process of oxidation under the SiGe/Si structure, the less oxidation, the higher fraction of Ge, as far as profile keeps staying Gaussian distribution. The reason for this is that a portion of Ge atoms remain in the SiO2, because there is no accumulation. If it keeps oxidation after all of Si in the SiGe layer used, Si in the Si_sub are diffused reversely and make SiO2. Therefore, the profile of Ge fraction doesn't follow Gaussian distribution anymore - distribution area expanded and maximum value drops. At the same time, a lot of dislocations come out by reverse diffusion of Si and we can confirm the same through AFM, TEM, and µ-scope. Precisely, we can estimate weather or not condensation process is optimized by checking Ge fraction profile. *This work was financially supported by Korea Ministry of Science & Technology through the NRL program. |
| 저자 | SeuckHoon Hong1, HunJoo Lee2, GonSub Lee1, JeaGun Park2 |
| 소속 | 1Nano SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | SiGe-on-insulator(SGOI); condensation; Ge diffusion profile |
