| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Influence of Growth Temperature on the Phase Formation of Tin Sulfide Thin Films by Vapor Transport Deposition |
| 초록 | Tin monosulfide(SnS) has been researched widely as a good candidate for earth-abundant photovoltaic absorber. SnS has a direct bandgap of 1.2~1.5 eV and high absorption coefficient over 104 cm-1, which is nearly optimum for photovoltaic solar energy conversion. Even though SnS has many advantages, it is difficult to grow pure-phase SnS because of easy formation of secondary phases such as SnS2 and Sn2S3. In this reaserch, SnS films were deposited by vapor transport deposition using SnS powder in a horizontal furnace. We changed the temperature of the SnS powder and substrate and tried to find optimal condition to obtain phase-pure SnS thin films. It was found that the substrate temperature influences the final phase of the deposited sulfides. More details on structural, optical, and electrical properties will be discussed in the presentation |
| 저자 | Dongha Lim1, Jaeyeong Heo2 |
| 소속 | 1Department of Materials Science and Engineering, 2and Optoelectronics Convergence Research Center |
| 키워드 | Tin sulfide; Solar cell; Absorber; Earth-abundant |
