| 초록 |
The directed self-assembly (DSA) of block copolymers (BCPs) has shown great promise for sub-20 nm lithography with conventional fabrication processes for integrated circuits. In DSA technique, Flory-Huggins interaction parameter (χ), which is associated with repulsion between block chains, affects a defect density and correlation length of self-assembly nanopattern. Therefore, BCPs with large χ value are important to form long-range ordered and well-defined nanostructures. In this study, new high χ PDVBAM-PMMA BCPs, which are composed of a crystalline PDVBAM block, and an amorphous PMMA block, were synthesized by RAFT polymerization. AFM, SEM, and GISAXS results showed that thin films of the block copolymers prepared via a simple solvent annealing have characterisitic nanostructures morphologies with long range ordering without a guiding template. |
