| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 에너지 환경재료 |
| 제목 | Electronic Transport Properties of Te-doped CoSb3 Prepared by Encapsulated Induction Melting |
| 초록 | Te-doped CoSb3 skutterudites (CoSb3-yTey) [1,2] were prepared by encapsulated induction melting, and their thermoelectric and electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the encapsulated induction melting and subsequent heat treatment at 773K for 24h. Secondary phases were not found until y is 0.3, indicating that all the Te atoms were soluble to the Co lattice sites. Te atoms acted as electron donors by substituting antimony atoms. Seebeck coefficients of all the samples showed negative values, and electrical resistivity decreased with increasing Te doping amount. Thermal conductivity was considerably reduced by doping due to the phonon scattering. Dimensionless thermoelectric figure of merit (ZT) was remarkably improved by the appropriate heat treatment and Te doping. Acknowledgments: This work was supported by the Regional Innovation Center (RIC) Program conducted by the Ministry of Commerce, Industry and Energy of Korean Government. [1] K.T. Wojciechowski, J. Tobola, J. Leszczynski, J. Alloys & Comp. 361 (2003) 19. [2] K.T. Wojciechowski, Mater. Res. Bull. 37 (2002) 2023. |
| 저자 | Mi-Jung Kim1, Soon-Chul Ur2, Il-Ho Kim1 |
| 소속 | 1Department of Materials Science and Engineering/ReSEM, 2Chungju National Univ. |
| 키워드 | Thermoelectric; Skutterudite |
