| 학회 |
한국화학공학회 |
| 학술대회 |
1999년 봄 (04/23 ~ 04/24, 성균관대학교) |
| 권호 |
5권 1호, p.1629 |
| 발표분야 |
재료 |
| 제목 |
플라즈마 MOCVD를 이용한 SrTiO3 박막 증착 및 특성 |
| 초록 |
High dielectric SrTiO3 thin films were deposited on Pt/Si substrate by plasma enhanced metal organic chemical vapor deposition (MOCVD) using high purity Ti(O-i-C3H7)4, Sr(tmhd)2 and oxygen. Parametric studies were carried out under various conditions. The deposition rates were substantially affected by bubbler and substrate temperatures and rf source power. The current density decreased as the deposition temperature increased up to 550 oC, and somewhat increased at 580 oC. The I-V characteristics showed that the conduction mechanism of the SrTiO3 film capacitor was controlled by the Schottky emission for thick films (> 30 nm), but by the tunneling effect for the films thinner than 30 nm. The potential barrier height and the electron affinity of SrTiO3 films were 1.2 eV and 4.0-4.3 eV, respectively.
|
| 저자 |
김도오, 최락준, 임연호, 조범철, 남기석, 한윤봉
|
| 소속 |
전북대 |
| 키워드 |
SrTiO3 thin films; plasma; MOCVD
|
| E-Mail |
|
| 원문파일 |
초록 보기 |
