| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Ferroelectric non-volatile memory with highly aligned polymer nanowire |
| 초록 |
We demonstrated a novel polymer NW ferroelectric field effect transistor (Fe-FET) with a position-addressable semiconducting polymer NW channel and ferroelectric polymer insulator. The direct electrohydrodynamic NW printing was employed to develop large-scale assembly of highly aligned semiconducting poly(3-hexylthiophene) (P3HT) NWs, allowing for precise control of location as well as number of NWs between source and drain electrode. Memory performance was systematically investigated as a function of the number of NWs in the channel regions. Our polymer NW Fe-FETs with carefully controlled NW/ferroelectric polymer interface exhibited large ON/OFF current margin of approximately 102 with time-dependent data retention and read/write endurance of more than 104 seconds and 102 cycles, respectively. Furthermore, they are mechanically flexible, and thus suitable for multiple bending circumstance. |
| 저자 |
황선각1, 민성용2, 김강립1, 이태우2, 박철민1
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| 소속 |
1연세대, 2포항공과대 |
| 키워드 |
Polymer nanowire; Semiconducting nanofiber; Ferroelectric polymer; Flexible memory; Field effect transistor memory; Organic memory; Electrohydrodynamic nanowire printing
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| E-Mail |
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