| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
고분자구조 및 물성 |
| 제목 |
Optimized Grafting Density of Silane-contained Polymers to Oxide Dielectrics for Organic Field-Effect Transistors |
| 초록 |
Polystyrenes (PS) were grafted to hydroxy-presenting silicon oxide (SiO2) or polymer dielectrics via a thermal grafting method of triethoxysilane-terminated PS series for solution-processed organic field-effect transistor (OFET) application. The dielectric surface properties were significantly altered by the areal grafting densities of different molecular-weight (Mw) PS chains containing the end-functionalized silane coupling site attached to the SiO2 surfaces. Lesser grafting densities of longer PS chains increased the surface roughness of the treated SiO2 surfaces. Below a critical Mw of end-functionalized PS, the gPS chains on the SiO2 surfaces appeared to form a brush-like conformation with an areal density value greater than 0.1 chains∙nm-2, but other high-Mw gPS chains formed pan-cake structures in which the polymeric layers degraded the self-assembly of organic semiconductors mounted on these layers, yielding different electrical properties of organic semiconductors in OFETs. |
| 저자 |
배현지, 양회창, 육지호, 장미, 신환호
|
| 소속 |
인하대 |
| 키워드 |
end-functionalized PS; triethoxysilane-terminated PS; solution-processed organic field-effec transistor; OFET
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| E-Mail |
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