| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Tuning of Energetic barrier at semiconductor/dielectric interface to enhance gate-bias stress stability of organic field-effect transistors |
| 초록 |
We report that the correlation between dielectric surface and the operational reliability of organic field-effect tranistors (OFETs). The bias stress stabilities of the OFETs with various functional styrene treated dielectric surface are investigatied. To investigate of charge transfer from semiconductor into dielectric layer under sustain bias stress, we performed ultraviolet photoelectron spectroscopy (UPS). An intresting results shows that the higher variation of highest occupied molecular orbitals (HOMO) between pentacene semiconductor and dielectric lead to highly stable OFETs. As a result, we suggest the energetic barriers which highly related with the variation for carrier transfer to dielectric layer. The energetic barriers are only influenced by variation of HOMO. Because applying low bias voltage can not provide sufficient energy for crossing the energetic barrier, all device shows highly bias stress stable behaviors. |
| 저자 |
김지예1, 안태규1, 박선욱1, 김세현2, 박찬언1
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| 소속 |
1포항공과대, 2영남대 |
| 키워드 |
Organic field-effect transistors; Bias stress effect
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| E-Mail |
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