| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Fluorinated polyimide gate dielectrics for the advancing the electrical stability of organic field-effect transistors |
| 초록 |
Organic field-effect transistors (OFETs) that operated with good electrical stability were prepared by synthesizing fluorinated polyimide (PI) gate dielectrics. These fluorinated polymers provided smooth surface topographies and surface energies that decreased as the number of fluorine atoms in the polymer backbone increased. These properties led to a better crystalline morphology in the semiconductor film grown over their surfaces. The number of fluorine atoms in the PI backbone increased, the field-effect mobility improved, and the threshold voltage shifted toward positive values (from –0.38 V to +2.21 V) in the OFETs with pentacene and triethylsilylethynyl anthradithiophene. In addition, the highly fluorinated polyimide dielectric showed negligible hysteresis and a notable gate bias stability under both a N2 environment and ambient air. |
| 저자 |
백용화1, 김래호1, 김경훈1, 김세현2, 박찬언1
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| 소속 |
1포항공과대, 2영남대 |
| 키워드 |
Organic field-effect transistor (OFET); gate dielectric; fluorinated polyimide; bias stress; charge trapping; operation stability
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| E-Mail |
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