| 초록 |
Low-voltage operation ability is necessary to save electrical energy to drive the wearable electronic devices. Here, we report an application method of dramatically lowering driving voltages in organic electronics via source-gated transistors (SGTs) structure. SGTs are fabricated by simply evaporating asymmetric metals with different work function for the source and drain electrodes. Versatile organic semiconductors based SGTs show the following advantages: highly lower drain voltage (＜10 V) for saturation regime compared with typical field-effect transistors (＞80 V). Furthermore, after coating reduced Pyronin B (rPyB) on n-type SGTs, the threshold voltage is changed from 51.16 to 0.07 eV and air-stability is improved, showing the maintained electron mobility (＞90 %) for 40 days. Finally, we fabricate flexible SGTs on Parylene-C substrate, maintaining electron mobility (＞90 %) in bending radius of 5.8 cm. |
