| 초록 |
The stochiometric mix of evaporating materials for the CuGaTe2 single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the CuGaTe2 polycrystal, it was found tetragonal structure whose lattice constant a0 and c0 were 6.025Å and 11.931Å, respectively. To obtain the single crystal thin films, CuGaTe2 mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670℃ and 410℃ respectively, and the thickness of the single crystal thin films is 2.1㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe2 single crystal thin films deduced from Hall data are 8.72×1023/m3, 3.42×10-2m2/V-s at 293K, respectively. |
