| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Revisiting the Apparent pH Sensitivity of Graphene Transistors |
| 초록 |
The origin of the apparent pH-dependent electrical signal of a solution-gated graphene transistor is analyzed. This is done by monitoring the Dirac voltage of a graphene transistor that was operated using differently made buffer solutions with varied pHs (6~8). Beyond hydronium and hydroxide ions, the critical role of other ionic species with high concentrations that are also included in pH buffers is revisited in forming electrical double layers at the pH buffer solution/graphene interface. It turns out that the density and the hydrodynamic size of these unappreciated extra ions adsorbed on the interface determine the Dirac voltage of these devices, instead of low density hydronium and hydroxide ions. Consequently, the pH-sensing of solution-gated transistors based on the apparent Dirac voltage shift seem to have been misleading. |
| 저자 |
이무형1, 김범준2, 조보은1, 이주희1, 조정호2, 강문성1
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| 소속 |
1숭실대, 2성균관대 |
| 키워드 |
graphene; transistor; ion sensing
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| E-Mail |
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