| 초록 |
Among various two-dimensional (2D) materials, graphene has brought a great deal of excitement to our community with its attractive and unique properties. Such excellent characteristics have led many researches on other 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), tungsten diselenide (WSe2) and so on. Recently, van der Waals heterostructures (vdWH) have been achieved by putting 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate physical properties of atomically-sharp heterostructure interfaces and fabricate high performance electronic devices for advanced applications. We fabricated a van der Waals device platform to investigate the intrinsic properties of 2D materials. The MoS2 field-effect transistors (FETs) encapsulated by hexagonal boron nitride (hBN) with edge-contacted graphene electrodes show superior performance of ultrahigh carrier mobility and device stability. Our device structure and fabrication process show a new way for studying of the intrinsic properties of sensitive 2D materials. |
