| 초록 |
We demonstrate that coupling between ion gel electrolytes and low-k oxide dielectrics can result in highly effective gating of field-effect transistors (FETs) based on 2D materials. This capacitive coupling is attained by laminating ion gel electrolytes onto fully fabricated 2D FETs that are gated through an underlying silicon dioxide layer. The laminated ion gel electrolyte layer significantly lowers the operating voltages and increases the on-current densities for a variety of 2D FETs while preserving low leakage current levels. Consequently, sub-4 V MoS2 FETs with exceptional device metrics are demonstrated (on/off switching ratio ＞ 106, electron mobility ~ 58 cm2/Vs, and sub-threshold swing ＜ 0.2 V/dec). Furthermore, this methodology was successfully applied to a diverse range of other 2D materials including BP, ReS2, and graphene, thus demonstrating the generality of the approach. |
