| 초록 |
Over the last decade, the industry has put into continuous efforts to explore image sensor technologies for increasing their number of pixels. The resulting new integrating-technologies such as ‘back side illumination’ have dramatically improved sensor resolution, however, in order to further boost image quality, it is necessary to expand the dynamic range, enhance sensitivity and prevent cross-talk or color mixing between pixels. Here we suggest the use of 1) non-absorbing n-type layer and 2) optical engineering of selective exciton extraction for constructing color-selective organic photodiode. Our new p-n junction structure also allows remarkably low dark current by suppressing dark current injection under the reverse saturation regime, thus enhancing the signal to noise ratio of the photodiode. In addition, due to the well-defined planar heterojunction geometry, we can finely define the transit time so that the temporal response of the photodiode can be optimized. As a result, we could realize high performance R/G/B-selective photodiodes. |
