| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | B. 나노 재료(Nanomaterials) |
| 제목 | New Class of 2 Dimensional Semiconductors |
| 초록 | In order to realize the logic function of two dimensional (2D) semiconductors for future IC devices, while a decent bandgap ＞ 1 eV and higher mobility than that of bulk silicon should be fulfilled, lots of functionalities utilizing 2D semiconductors are also on demand; (1) the low temperature synthesis for application to the flexible devices, (2) feasibility of homogeneous and heterogeneous schottky and p/n junction diodes, and (3) the facile adjustment of optical absorption and emission. In this talk, I will discuss about the emerging class of 2D semiconductors. Along with the brief introduction to tin disulfide 2D materials, I will go over recent experimental results for (1) graphene based 2D semiconductors and (2) oxide based 2D semiconductors. Firstly, the atomically F-doped single layer graphene was fabricated using thermal fluorine (F) functionalization and this gives the large bandgap at ＞ 3 eV and UV photoemission. Applying this F-doping technique to epitaxially grown SLG on SiC, a strong p-doped SLG intercalated by F on SiC was generated and shows the apparent 2D diode characteristics. Secondly, I will introduce the recent technical advances of fabrication of 2D-like oxide semiconductors utilizing the layered oxide structure as in WOx etc. As another example of creating 2D oxide semiconductor embedded in the bulk structure, photochemically assisted atomic hydrogen doping technique selective to nano-crystals in amorphous InGaZnO is discussed and this result demonstrates the possibility of large extent transport tunability from the insulating to conducting property. |
| 저자 | 서형탁1, 이상연1, 박유민1, 전기준2, 전형탁3 |
| 소속 | 1아주대, 2인하대, 3한양대 |
| 키워드 | 2D semiconductor; bandgap; diode; doping; electronic structure |
