| 학회 |
한국재료학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 |
25권 2호 |
| 발표분야 |
E. 환경/센서 재료 분과 |
| 제목 |
Effect of additives on FACsPbI3 Perovskite in respect of Memristor characteristic |
| 초록 |
Due to the scaling limitation of conventional memories, many replacements are suggested for simple structured and new non-volatile memory. Resistive random access memory(RRAM) is the one of the replacements that is recently suggested and considered promising candidate for a next generation non-volatile data storage. In recent days, Organic halide Perovskites (OHPs) with the form of ABX3, where A is the organic cation(CH3NH3, CH(NH2)2), B is the metal cation(Pb, Sn), and X is the halide anion(I, Br), have received attention for applying as active layer in RRAM device. The halide ions in OHPs show a fast ion migration characteristic because of low migration activation energy of them. This study is focused on the Memristor characteristics of FACsPbI3 Organic-Inorganic halide Perovskite in terms of additive effects. We prepared thin-film FACsPbI3 perovskite Memristor by solution processing. NaSCN and NH4SCN are used as Additives, which influence the properties of device. The device fabricated with NH4SCN shows low operating power consumption and The device with NaSCN shows intrinsic rectifying property that It limits the reverse current to lower quantity than the forward current. These results will provide opportunity of low power consuming memory and potential of high-density Cross-Bar Arraying. |
| 저자 |
In-Hyuk Im1, Do Yeon Heo2, Ho Won Jang3
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| 소속 |
1Department of Materials Science and Engineering, 2Seoul National Univ., 3Seoul |
| 키워드 |
Memristor; additive effect; FACsPbI<SUB>3</SUB>
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| E-Mail |
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