| 초록 |
Correlated transition metal oxides have attracted considerable attention due to a remarkable array of functionalities that stem from the strong correlations between the localized transition metal valence d electrons. One of the representative functionalities in transition metal oxides includes abrupt phase transition under external stimuli, e.g. metal-insulator transition, in correlated electron systems. The uniques property can be applicable to the electronic devices for steep electronic switch, such as the logic and memory devices with high on/off ratio, the selector devices for 3D cross point memory. In this presentation, I will represent our recent result to realize unconventional electronic devices, such as the steep selector devices and synaptic analog devices for neuromorphic application, using correlated oxides, such as NbO2, NdNiO3 etc. |
