| 초록 |
The semiconductor etching or CVD processproduces harmful gases that adversely affect the human body and theenvironment. Recently, many studies have been conducted to remove harmful gasessuch as hydrogen fluoride. Generally, chemical adsorption performance can beincreased when oxidation treatments modify activated carbon surfaces. By usingthe oxygen plasma method, it can make oxygen functional group-based activationsites. The advantage of this plasma method is that no additional solvent isrequired, and no by-products are produced. Therefore, in this study, thesurface of activated carbon was reformed using oxygen plasma to improvehydrogen fluoride adsorption performance. The oxygen functional group wasactivated by adjusting the flow rate (50~200 sccm) of high-purity oxygen gas.The FT-IR and XPS are used to analyze the chemical structure ofsurface-modified activated carbon. Also, the SEM and BET analysis are used toobserve pores and the surface structure. |
