| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Wafer-scale Microwire Transistor Array Fabricated via Evaporative Assembly |
| 초록 |
One-dimensional (1D) nano/microwires have attracted significant attention as promising building blocks for various electronic and optical device applications. Here, we demonstrated the fabrication of wafer-scale microwire field-effect transistor (FET) arrays based on well-aligned inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO)) and organic polymeric insulator microwires fabricated via a simple and large-area evaporative assembly technique. The resulting solution-processed monolithic IGZO microwire FETs exhibited a maximum electron mobility of 1.02 cm2V–1s–1 and an on/off current ratio of 106. The appropriate choice of the polymeric microwires used to define the channel lengths enabled fine control over the threshold voltages of the devices, which were employed to fabricate high-performance depletion-load inverters. Low-voltage-operated microwire FETs were successfully fabricated on a plastic substrate using a high-capacitance ion gel gate dielectric. |
| 저자 |
박재훈1, 최용석1, 이승우1, 이동윤2, 조정호1
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| 소속 |
1성균관대, 2경북대 |
| 키워드 |
microwire transistor; blade–coating; metal oxide semiconductor; plasma–induced metallization
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| E-Mail |
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