| 학회 |
한국재료학회 |
| 학술대회 |
2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 |
24권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
High speed and gate controlable graphene photodetector |
| 초록 |
Despite the excellent performance wide bandwidth approcahing 500GHz, high cutoff frequency of ~60GHz, and mobility of ~105cm2/Vs of graphene, it is difficult to use the graphene in the optical device due to the gapless band structure. Graphene synthesized by CVD method transferred to Si wafer and used as active layer and, Si used global back gate. The photodetector of this study is a FET structure using graphene as an active layer and a metal back electrode as a metal electrode, a local top gate, a source and a drain. Local top gate were defined by lift-off method and deposited by ITO sputtering. To solve gapless of graphene, method making defect at graphene, and graphene nanoribbon is not perfect yet because of which may degrade carrier mobility of graphene. Accordingly we adopted method can handle problem to gapless of graphene. The research solve gapless of graphene and do not degrade high carrier mobility merit of graphene thus can be appled to high speed photodetector for optical computing, optical communication, etc. |
| 저자 |
인재현1, 이정상2, 주현수2, 이용복2, 주병권1, 이전국2
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| 소속 |
1Korea Univ., 2Korea Institute of Science and Technology |
| 키워드 |
graphene; photodetector; dual gate; pn junction; photovoltaic
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| E-Mail |
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