| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Nondestructive and direct photolithography for high-resolution InP quantum dot patterns by atomic layer deposition |
| 초록 | Semiconductor nanocrystals or colloidal quantum dots (QDs) are considered as one of the future emissive display materials due to their excellent optical properties. They can change their optical properties by changing their size and have narrow full width at half maximum. Group Ⅱ-Ⅵ (Cd-based) QDs show excellent performance and have played the biggest role in establishing QDs as next-generation display materials. There have been many attempts for to replace Cd with other environmentally friendly elements and InP is one of the promising materials. Patterning QD film is highly required to fabricate pixelated QD display. In organic light emitting diodes (OLEDs) which uses organic luminophores, thermal evaporation is used to make pattern, but in QD-LEDs, it is hard to be used since QD should be solution-processed. Recently, ink jet printing and contact transfer printing have been actively developed; however, those methods are still limited owing to nozzle clogging and coffee ring effect during ink jet printing and reproducibility of the process during transfer printing because of pick up and peeling speed. Here, we report nondestructive and direct photolithography-based patterning process for InP-based QDs for the first time. According to our study, positive photoresist makes QD PL worse. In positive photoresist, there is diazonaphtoquinone (DNQ) which is one of the most popular photo active compound (PAC) and we believe that DNQ is one of the reasons for QD PL Quenching. To prevent PL Quenching, we use negative photoresist in this work. After coating the InP-based QD and ZnO ALD to provide solvent resistance, negative photoresist was coated on the film and then lithography process was carried out. As a result, there is no PL quenching after photolithography when red InP-based QD was used and slight PL decreased was observed when green InP-based QD was used. 800 ppi high-resolution InP_based QD pattern was obtained using conventional photolithography. When the same negative type photoresist was used for Cd-based QD film, enhanced PL behavior was obtained compared to our previous study. |
| 저자 | 이준엽, 조성용 |
| 소속 | 명지대 |
| 키워드 | <P>QD-LEDs ; atomic layer deposition ; photolithography ; patterning ; InP QD</P> |
