| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Surface modification of Cu(In,Ga)Se2 (CIGS) films with a post deposition treatment (PDT) using a potassium iodide solution and its effect on the CIGS thin film and solar cell performance |
| 초록 | The formation of the high quality heterojunction is a key issue in the fabrication of high efficiency Cu(In,Ga)Se2 (CIGS) cells. A deliberate tailoring of the chemical state of CIGS absorber and the optoelectronic structure at interface of the buffer/CIGS with alkali post deposition treatment (PDT) is efficient approach to reduce the interface recombination. Alkali fluoride compounds such as NaF, KF, RbF, and CsF have been used for the purpose, leading to cell efficiencies above 20%. In this study, we employed potassium iodide solution for the PDT of CIGS thin film. We provided the optimization of treatment process parameters to increase cell efficiency. As a result, the KI solution treatment improved the cell performance. To clarify the origin of the efficiency enhancement we are currently investigating the effect of PDT on the surface chemical composition of absorber and optoelectronic structure of CIGS/CdS interface. The experimental results provide the knowledge base for further optimization of the interface properties to form high-quality p-n junction in the CIGS solar cells. |
| 저자 | Jeong Hyun Lee1, Nikolai Tsvetkov2, Liudmila Larina1, Byung Tae Ahn2 |
| 소속 | 1Department of Materials Science and Engineering, 2Korea Advanced Institute of Science and Technology |
| 키워드 | Cu(In; Ga)Se<SUB>2</SUB>; post deposition treatment (PDT); interface recombination |
