| 초록 |
Sb2S3 is appealing as an efficient light absorber among metal chalcogenides. Because it has suitable properties for adapting solar cells like band gap (1.7eV), strong absorption coefficient(1.8 * 105 in visible region) and large dipole moment which enable separate charge easily. The deposition methods of Sb2S3 light absorber are spin coating deposition, successive ionic layer adsorption and reaction (SILAR), and chemical bath deposition (CBD). Although the SILAR and CBD in aqueous phase can form conformal thin film, it is difficult to avoid the antimony oxide which acts as a trap site, so that the Sb2S3 light absorber reveals deep traps within bandgap. Therefore, additional healing process is required to eliminate/reduce the trap sites. So we synthesized Sb(TA)2Cl3 single source precursor which can convert Sb2O3 into the pure Sb2S3 by heat treatment. And we fabricated Sb2S3 sensitized solar cells by spin & heat treatment using Sb(TA)2Cl3 single source precursor after CBD method. By adopting this method, we can heal Sb2O3 trap site and roughness surface which translate chare more efficiently . From this view, spin coating and atomic layer deposition by Sb(TA)2Cl3 can be a great method for deposit pure, lough Sb2S3 film. |
