| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Characteristics of MGZO thin films |
| 초록 | ZnO is of great interest for large-area optoelectronic devices, e.g., flat panel displays, light-emitting diodes, transparent semiconductors, and transparent conductive oxides (TCOs) etc., owing to its good optical properties. Among other things, TCO within the solar cell serves as a transparent window layer through which sunlight is transmitted, so both electrical conductivity and light transmittance should be good. Recently, In doped SnO2 (ITO), which has a low resistivity of less than 10−4 Ω·cm, a wide band gap energy of 3.5 eV, and high transmittance in the visible region, is most widely used as a TCO material. However, the material is expensive and thermally and chemically unstable in plasma condition because of the rarity of In. Therefore, there is a need for research on TCO materials to replace ITO. This study compares the properties of ZnO materials doped with elements such as Al, Mg, and Ga with various contents. The reason for studying MGZO is that Ga is more resistant to oxygen than other Group III elements into ZnO. Also, this is because it is most similar to Zn ion radius and can minimize defects. In addition, when doping MgO, the band gap of the ZnO thin film can be controlled from 3.3 eV to 7.8 eV to improve light transmittance. As the final outcome, Mg-Ga co-doped ZnO can improve the optical and electrical properties simultaneously. |
| 저자 | 장수영1, 김진혁2 |
| 소속 | 1전남대, 2광전자융합기술(연) |
| 키워드 | <P>TCO; MGZO; ITO; Thin film solar cell</P> |
