| 학회 |
한국고분자학회 |
| 학술대회 |
2019년 가을 (10/09 ~ 10/11, 제주컨벤션센터) |
| 권호 |
44권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Large area thin film process technology using organometallic precursor for transition metal dichalcogenides |
| 초록 |
High-performance semiconducting films with precisely engineered thicknesses and compositions are essential for developing next generation electronic devices, which are becoming more integrated, complex, and multifunctional. In this talk, I will introduce the facile methodology for the large-scale production of layer-controlled transition metal dichalcogenide (TMDC) layers on an inexpensive substrate involving a simple coating of single source precursor on the wafer-scale. These processes include: (i) the coating and subsequent thermal decomposition processes for a large-scale synthesis of two-dimensional transition metal dichalcogenides (TMDCs), (ii) roll-to-roll-based thermal decomposition, and (iii) the fabrication of TMDC nanostructures using a single source precursor. I will also introduce single source precursors synthesis for the synthesis of p-type TMDCs including layered tungsten diselenide (WSe2). |
| 저자 |
임종선, 임이랑, 한진규, 송우석, 명성, 김창균, 정택모
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| 소속 |
한국화학(연) |
| 키워드 |
TMDC; Large area; Solution process; single precursor
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| E-Mail |
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