| 학회 |
한국공업화학회 |
| 학술대회 |
2012년 봄 (05/09 ~ 05/11, 김대중컨벤션센터) |
| 권호 |
16권 1호 |
| 발표분야 |
정보.전자소재 |
| 제목 |
Characterization of solution-processed dielectric layer of octamethyl cyclotetrasiloxane with an organosilane crosslinking angent |
| 초록 |
We have demonstrated crosslinkable gate dielectrics based on an insulating silane materials such as Octamethyl cyclotetrasiloxane(OMTS) with an organosilane crosslinker, 1,6-bis(trichlorosilyl)hexane. The OMTS could be easily spin coated on Si wafer and annealed at low temperature. The electrical performance and chemical analysis for the cross-linked dielectrics were performed and discussed. The cross-linked OMTS film can be applicable to the development of flexible display as a gate dielectric layer. |
| 저자 |
정헌상, 원현섭, 이현호
|
| 소속 |
명지대 |
| 키워드 |
Octamethyl cyclotetrasiloxane(OMTS); organosilane crosslinker
|
| E-Mail |
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