| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 가을 (10/11 ~ 10/12, 일산킨텍스) |
| 권호 |
32권 2호 |
| 발표분야 |
플렉서블 일렉트로닉스와 고분자재료 |
| 제목 |
Understanding of roughness-dependent pentacene growth on polymer/aluminum oxide dielectrics for low-cost flexible field-effect transistors |
| 초록 |
The aurthors have investigated pentacene nanostructures on flexible poly(α-methylstyrene)/Al2O3 bilayer gate dielectrics with different scales in surface roughness onto as-received or treated Al foil, and a smooth control dielectric, by using atomic force microscopy (AFM) and grazing-incidence X-ray diffraction (GIXD). In particular, lateral current flows in the first pentacene seeding nanolayers on the bilayer gate dielectrics, as indicated by conducting-probe AFM (CP-AFM) has been correlated with charge transport behaviors in the corresponding 50-nm-thick pentacene films. AFM and 2D GIXD analyses, and device performance of pentacene films on dielectrics with different scale surface roughness suggest that the nanostructure and the π-π conjugation of the pentacene are perturbed by the high local curvature dielectric surface rather than the low local curvature one from the electro-polished Al foil, which has enough potential for large area and flexible OFET applications. |
| 저자 |
양찬우1, 양회창2, 신권우3, 김세현1, 박찬언1
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| 소속 |
1포항공과대, 2Rensselaer Nanotechnology Center, 3Rensselaer Polytechnic Institute |
| 키워드 |
organic field-effect transistors; pentacene; low-cost flexible devices; dielectric roughness
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| E-Mail |
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