| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Two-Dimensional MoS2 Nanoflake Floating Gates for Quasi-Permanent Charge Storage in Multilevel Organic Flash Memory |
| 초록 |
Two-dimensional(2D) materials, such as molybdenum disulfide(MoS2), for future electronic applications have received enormous attention for a variety of approaches including sensors, logic circuits, field-effect transistors, and nonvolatile memory. A few papers recently have utilized MoS2 nanosheets as a semiconductor or a charge-trapping layer in flash memory devices. Herein, we report on solution-processed organic transistor memory devices using MoS2 nanoflakes, prepared by exfoliation of MoS2 bulk flake via Li intercalation, as charge-trapping elements. MoS2 floating gate are imbedded at the interface between bi-layered polymer dielectrics; Polystyrene/Poly(methyl methacrylate)for organic nano-floating gate memory(NFGM) devices. Interestingly, the MoS2 layer on NFGM offers significant improvements in retention time and cycling endurance with a discrete intermediate state. Therefore, we successfully demonstrate stable multi-level cells made from MoS2-based organic transistor memory. |
| 저자 |
강민지1, 김영아1, 윤진문2, 김동윤1, 김지홍1, 노용영3, 백강준4, 김동유1
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| 소속 |
1광주과학기술원, 2한국원자력(연), 3동국대, 4한국전기(연) |
| 키워드 |
Organic Non-Volatile Memory; MoS2; Floating Gate; Charge Trapping; Multilevel Memory
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| E-Mail |
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