| 초록 |
Metal-oxide semiconductors (MOSs) have been studied extensively as active layers in thin-film transistors (TFTs) for active-matrix organic light-emitting displays (AMOLEDs), ultrahigh-definition liquid-crystal displays (UHD-LCDs) and for next-generation electronics. They are attractive material owing to the high carrier mobility, optical transparency and electrical stability. In the early studies, these materials were primarily prepared using a vacuum process but it has high fabrication cost and complicated problems. On the other hand, solution processes such as inkjet printing, dip coating, and spin coating have advantages in process simplification and cost. Recently, several research groups have studied solution process derived TFTs using IZO, ZTO, IGO, and IGZO as active channel layers. However, solution processed thin films have suffered from low dense and poorer electrical performance than vacuum processed films. So many of the research groups focus on efficient methods for enhancing the performance of the MOS TFT. Most of the approaches have focused on annealing treatment or post-treatment after annealing. Herein, to enhance the field-effect mobility, we have developed a novel and easy strategy for fabricating solution-processed MO TFTs by controlling the dissolved oxygen (DO) in the aqueous water solvent with bubbling method. As a result, electrical performance of In2O3 TFTs fabricated from nitrogen gas bubbled water solution is higher than In2O3 TFTs fabricated from general deionized water (DIW) solution. |
