| 초록 |
Al thin films were synthesized from methylpyrolidine alane(MPA) precursor on TiN/Si substrate by MOCVD. Effects of the reaction time, reaction pressure on the electrical resistivity, surface roughness and deposition rate were investigated. The initial stage of Al thin film formation was elucidated by in-situ surface reflectivity measurement and discussed with corresponding morphology changes. The growth rate was increased as the reaction time and pressure increased, and the average growth rates of 200～1,200 nm/min were observed at various experimental conditions. The surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about 4 μΩ‧cm in the case of good quality film, and it was very close to the value(2.7) of the bulk Al. |
