| 학회 |
한국공업화학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/03, 한경대학교) |
| 권호 |
11권 2호 |
| 발표분야 |
무기재료 |
| 제목 |
Functional Oxide thin films by Inkjet printing Process |
| 초록 |
The highly transparent SnO2 thin films were deposited through solution-based inkjet printing using a precursor solution prepared by dissolving tin tetrachloride (SnCl4) into acetonitrile (CH3CN) with 1 to 25 volumetric ratios at room temperature. We achieved thin nanoporous layer on top and a thicker meso- (~2 to 20nm) and macroporous layer (~70 nm to 100nm) beneath the top layer by inkjet printing process. The thin film transmittance is over 98 % in the visible wavelength range. A mechanism based on gas evolution was proposed to explain the formation of porous structure. A depletion mode thin film transistor based on the porous tin oxide channel layer was fabricated. A field effect mobility of 3.62 cm2/Vs was obtained which is higher than previous reported SnO2 TFTs using sputtered thin films. |
| 저자 |
이두형1, 류시옥1, 이태진1, Chih-Hung Chang2
|
| 소속 |
1영남대, 2Oregon State Univ. |
| 키워드 |
oxide; thin film; Inkjet; porous
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| E-Mail |
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