| 학회 | 한국고분자학회 |
| 학술대회 | 2003년 가을 (10/10 ~ 10/11, 부경대학교) |
| 권호 | 28권 2호, p.293 |
| 발표분야 | 특별 심포지엄 |
| 제목 | Effect of curing agent on pin-hole fraction and the dielectric properties of cross-linked gate dielectric layer in organic field effect transistor |
| 초록 | Organic field effect transistors (OFET) have been studied actively and the performance of that have improved dramatically over the last decade. As the gate dielectric material, silicon dioxide on silicon substrate has been used widely but with this gate dielectric and substrate, it is impossible to make the flexible electronics. To overcome a disadvantage of this kind of materials, many groups in OFET field have tried to use the solution-based polymer gate materials which can be applied by conventional method such as spin-coating and has the flexible properties. The thin gate dielectric layer used in OFET must be pin-hole free and have low gate leakage in the range of applied voltage for operating a device. High dielectric constant of the gate dielectric may also become important when low device operating voltage is needed. In this study, we chose the cross-linked system for the gate dielectric layer with poly-4-vinylphenol (PVP), in which the hydroxyl groups can be cross-linked with a presence of curing agent. With this system, the effect of curing agent on the pin-hole fraction and the dielectric properties of cross-linked gate dielectric layer was studied in detail. |
| 저자 | 양상윤1, 박찬언1, Wei Xia2, Benoit Domercq3, Bernard Kippelen4 |
| 소속 | 1포항공대 화학공학과, 2Dept. of chemistry, 3Univ. of Arizona, 4School of Electrical and Computer Engineering |
| 키워드 | OFET; gate dielectric; pin-hole |
