화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2002년 봄 (04/12 ~ 04/13, 서울대학교)
권호 27권 1호, p.167
발표분야 분자전자 부문위원회
제목 Nanolithography of Methacrylate-Based Polymer Layer on Silicon Surface
초록 Nanometer-scale patterning of spin-cast polymer on a silicon substrate has been performed by using the atomic force microscope (AFM). The polymers were synthesized from BPMA(1,3-bis(trimethylsilyl)isopropyl methacrylate), TFMA(tetra-hydrofurfuryl methacrylate) and MAA(methacrylic acid). This polymer showed good thermal stability up to 140 ℃ and good resistance to the HF solution. This polymer had also good stripping property in THF. So we applied this polymer for AFM nanolithography process. As the result, the patterns of several tens nanometer-size were obtained. The characterization of these results was studied by using various techniques such as AFM, LFM and ellipsometry.
저자 손민석1, 김응렬2, 한신호*, 이해원
소속 1한양대, 2*한국산업기술대
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