| 초록 |
As the efficiency of solar cells has increased, solar cells using n-type substrate have been used. There arises a problem that Siliver(Ag) electrode formation is not performed well while boron is used for forming the emitter. This is connected to the series resistance(Rs) of the solar cell and directly causes reduction of Fill-factor(FF) and efficiency decrease. So, after making intentionally spikes by mixing Aluminum(Al), make an Ag/Al contact. However, the spike of Al is a factor that can cause the shunt problem. Therefore, in this study, we tried to make Ag contact with boron emitter, and studied about Ag crystallite formed in boron emitter through temperature, peak time, and current-injection. As the peak time increase, the phenomenon of receiving more heat and the increase of the amount of current increase the contact resistance and Ag crystallite to observe the contact resistance and current-path |
