| 학회 | 한국재료학회 |
| 학술대회 | 2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 | 15권 2호 |
| 발표분야 | C. Energy and the Environment(에너지 및 환경재료) |
| 제목 | 용액공정을 이용한 SiOC/SiO2 박막제조 |
| 초록 | Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around 350oC~430oC. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at 400oC for 6h was 2,500 and is easily soluble in organic solvent. SiOC /SiO2 thin film was fabricated onto n-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in the air up to 500°C for 2h. The thickness of the film is ranged from 1μm to 1.7μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology. |
| 저자 | 김영희1, 김수룡1, 권우택1, 이정현1, 유용현2, 김형순2 |
| 소속 | 1한국세라믹기술원, 2인하대 |
| 키워드 | SiOC /SiO2 thin film; solution process; polyphenylcarbosilane |
