| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Comparative study between optical and structural properties of annealed Mg- doped GaAs epilayers |
| 초록 |
Optical and structural properties of Mg-doped GaAs are studied with emphasis on photoluminescence (PL) and high-resolution x-ray diffraction measurements (DCXRD). The samples have been grown on semi-insulator GaAs (100) substrate by molecular beam epitaxy (MBE) with different doping concentration. In order to study post-growth annealing effect, the samples have been annealed at the temperature range of 600~750℃ by rapid thermal annealing (RTA) process. The results of PL spectra showed large blueshift and narrowing of FWHM at annealed sample (TS=475℃). The high-resolution x-ray diffraction measurements (DCXRD) with different annealing temperature showed the improvement of crystalline quality below the annealing temperature of 600℃. The crystalline quality variation of Mg doped GaAs layers by RTA is greatly dependent upon the doping level. |
| 저자 |
김종호1, 박호진2, 김군식1, 김도엽2, 송민경1, 신창미2, 조관식1, 류혁현2, 전민현1, 임재영2, 김종수1, 김진수2, 이동율1, 손정식2
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| 소속 |
1인제대, 2나노매뉴팩쳐링 (연) |
| 키워드 |
Mg; photoluminescence; DCXRD; MBE; annealing effect; GaAs; doping
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| E-Mail |
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