| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Investigation on Capacitance-Voltage and Hall Effect Measurement of Mg-doped GaAs grown by MBE |
| 초록 |
Mg-doped GaAs epilayers have been grown on semi-insulator GaAs (100) substrate by molecular beam epitaxy (MBE) with different hall concentration. The samples were grown by varying two growth parameters such as growth temperature (460~540℃) and arsenic (As) beam equivalent pressure (BEP) (7.4×10-6 ~ 1.6×10-5 Torr) in order to obtain the optimum condition of p-type doping. The electrical properties of Mg doped GaAs epitaxial layers with different substrate temperatures have been investigated by Hall and capacitance-voltage (C-V) measurements at room temperature. The carrier concentration obtained by Hall measurements was decreased from 1.4×1019 cm-3 to 3.4×1016 cm-3 with increasing in the substrate temperature ranged from 460℃ to 540℃. The room temperature hole mobility was decreased from 260 cm2/V•s to 6 cm2/V•s with increase the carrier concentration. The maximum attainable doping density was NA-ND = 1.4×1019 cm-3. The depth profiles of doping density obtained from room temperature C-V measurements is probably related to a number of carriers were heavily out-diffused toward the surface. |
| 저자 |
김종호1, 박호진2, 김민수1, 전수민2, 김현지1, 조민영2, 조관식1, 류혁현2, 전민현1, 임재영2, 김종수1, 김진수2, 이동율1, 손정식2
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| 소속 |
1인제대, 2나노매뉴팩쳐링 (연) |
| 키워드 |
Magnesium; C-V; Hall effect; molecular beam epitaxy; BEP; doping
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| E-Mail |
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