| 초록 |
Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in amorphous state and excellent large-area uniformity have extended their applications to active-matrix electronics including displays, sensor arrays, and X-ray detectors. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates. However, metal oxide formation by sol-gel route requires a crucial annealing step at relatively-high temperature which impedes their incorporation onto the conventional polymeric substrates and thus high-performance flexible electronics. In this presentation, high performance solution-processed metal-oxide semiconductors as well as advancements in lowering processing temperature for thin-film-transistors (TFTs) will be demonstrated. Additionally, the developments of advanced technologies for low-cost solution-processed metal-oxide TFT based display backplanes and integrated circuits will be addressed. |
