| 초록 |
Application of CeO2 nanoparticles as abrasives in STI CMP process was very successful and the amount of the use in semiconductor process tends to increase substantially. But a relatively large number of scratches after CMP is still a problem and improvement of removal rate is required to enhance productivity of integrated circuits. In this study, we synthesized CeO2 nanoparticles by heat treatment, solid-state reaction and hydrothermal process, and the synthesized CeO2 nanoparticles were characterized by XRD, SEM, TEM and HRPD. In the case of heat treatment, we varied the oxygen concentration in a tube furnace. And we dispersed them in aqueous medium with a stabilizer and a neutralizer to make sample slurries and controlled the secondary particle size of CeO2 nanoparticles lower than 200nm by milling. Particle size was measured by dynamic light scattering at intervals of 2 hours for 20 hours or larger. |
