| 학회 | 한국재료학회 |
| 학술대회 | 2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 | 10권 2호 |
| 발표분야 | 반도체 II(화합물) |
| 제목 | 준안정상 Ge2Sb2Te5의 결정화 및 결정립 성장에 관한 미세구조 연구 |
| 초록 | Ge-Sb-Te-based materials are well known as phase change materials for data storage. The crystallization and grain growth of the Ge2Sb2Te5 materials, which have been spotlighted as a new device for the application of phase-change random access memory (PRAM), is investigated by a cross-sectional transmission electron microscopy (TEM) study1,2. Especially, we focus on the microstructural characterization of the meta-stable Ge2Sb2Te5 at the temperature range of 150~300°C. Each specimen prepared by sputtering deposition method was annealed at 150, 200, 300, and 400°C for 10 min, and some specimen were annealed for 2 sec~30 min step by step at 200°C in order to investigate the crystallization and grain growth of meta-stable Ge2Sb2Te5. The Ge2Sb2Te5 thin films had different electrical properties and microstructures with the dependence on the various annealing conditions. The sheet resistance of Ge2Sb2Te5 thin films was directly related to the degree of crystallization and grain size. Especially, a large amount of the resistance loss happened during grain growth. Similar to the Johnson-Mehl-Avrami equation1, the crystallization and grain growth of Ge2Sb2Te5 thin films are more dependent on annealing temperature than annealing time. The electrical characteristics of Ge2Sb2Te5 thin films are much dependent on the grain size as well as the degree of crystallization. [1] T.H. Jeong, M.R. Kim, H. Seo, S.J. Kim, and S.Y. Kim: J. Appl. Phys. 86, 774 (1999). [2] S. Privitera, C. Bongiorno, E. Rimini, and R. Zonca: Appl. Phys. Lett. 84, 4448 (2004). |
| 저자 | 박유진1, 이정용1, 염민수2, 김용태2 |
| 소속 | 1한국과학기술원 신소재공학과, 2한국과학기술(연) |
| 키워드 | TEM; Ge2Sb2Te5; crystallization; grain growth |
