| 초록 |
Polycrystalline CryTi1-yO2 and BaxTi1-xO3 thin films were deposited on silicon (Si) and on indium doped tin oxide (ITO) coated glass substrates by spin coating method. Vertically aligned ZnO nanorods were prepared by wet chemical seed-layer growth technique. We report the p-type conductivity in CryTi1-yO2 thin films (y=0.005, 0.05, 0.1, 0.15, 0.2) and variable turn-on voltage (VO) in heterojunction ZnO nanorod/CryTi1-yO2/ITO bipolar device. BaxTi1-xO3 thin films (x=0.05, 0.1, 0.2, 0.5) was introduced as an intermediate layer between ZnO nanorod and CryTi1-yO2 layer. BaxTi1-xO3 thin films being ferroelectric, the effect of this layer on the overall electrical performance of the heterojunction ZnO nanorod/ BaxTi1-xO3/CryTi1-yO2/ITO bipolar devices was studied. |
