| 학회 |
한국화학공학회 |
| 학술대회 |
2017년 봄 (04/26 ~ 04/28, ICC 제주) |
| 권호 |
23권 1호, p.1032 |
| 발표분야 |
재료 |
| 제목 |
ZnO nanosheets based solution-gated FET for low level detection of formaldehyde |
| 초록 |
New and effective chemosensor based on solution-gated metal oxide semiconductor field-effect transistor (MOSFET) was fabricated for the detection of harmful formaldehyde chemical. The zinc oxide (ZnO) nanosheets (NS) thin film of thickness ~10 μm was successful deposited on silicon (Si) substrate by chemical bath deposition (CBD) technique. The morphological characterizations showed that grown ZnO thin film possessed porous and interwoven net-shaped nanosheets on Si substrate. The synthesized ZnO NS were crystalline, highly pure and possessed wurtzite hexagonal structure by field emission scanning electron microscope (FESEM). The performance of the fabricated MOSFET was examined by measuring current-voltage characteristic in the phosphate buffer solution (PBS) with and without the incorporation of formaldehyde chemical. The sensing results revealed that the fabricated MOSFET sensor exhibited a stable, reliable high sensitivity with concentration detection ability. The deposited porous ZnO NS between source and drain electrodes provided a new platform for the good performance of ion exchange and diffusion during the sensing measurements. |
| 저자 |
김은비, 아민 사디아, 모흐드나짐, 압둘라, 장광수, 이지은, 피자히 라미아, 신형식, 서형기
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| 소속 |
전북대 |
| 키워드 |
화공소재 전반 |
| E-Mail |
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| 원문파일 |
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